SOC中的平面拐线的等效电路

Equivalent circuit of planar right-angle bend on SOC

将保角变换理论最新研究成果———区域分裂法求解保角模(DDM-CM)应用于SOC中的平面拐线附加电容和附加电感的提取,根据推导过程建立了平面拐角的高频等效电路,并且分析了硅衬底对平面拐线参数的影响.结果表明,利用DDM-CM的得到的结果还是比较正确、简洁的.

In this paper, the domain decomposition method for conformal modules （DDM-CM） is applied to get simple analytic expressions for the excess capacitance and excess inductance of the planar right angle bend in SOC, and the high frequency equivalent circuit for right-angle bend is established based on the above method. The influence of the silicon substrate is analyzed and the result of the tests show that the analytical expression of excess capacity and inductance obtained by the DDM-CM is quite correct and succinct.