摘要
用脉冲激光沉积(PLD)的方法在硅单晶基片上制备了Ti90Cr10和Co80Cr20/Ti90Cr10薄膜,用XRD研究了Ti90Cr10薄膜的晶体结构与制备温度的关系,结果表明随着温度升高,薄膜从非晶态逐步向晶态转化,并且计算了Ti90Cr10薄膜的晶粒大小以及晶格常数.利用透射电镜对Ti90Cr10薄膜进行了表面和截面形貌的表征.采用纳米压痕仪对Ti90Cr10薄膜的硬度和膜基界面结合力进行了分析,表明薄膜的硬度和膜基结合力随制备条件改变有所变化,制备温度增加,薄膜的硬度和膜基结合力随之增加.利用Ti90Cr10薄膜作为中间层,用PLD制备了Co80Cr20磁性层,获得了很好的垂直磁化性质,膜厚减小,矫顽力和矩形比有所增加,600℃真空条件下制备的Co80Cr20(8nm)/Ti90Cr10(14nm)薄膜的矫顽力为65·25kA/m,矩形比为0·86,并且讨论了Co80Cr20/Ti90Cr10薄膜的磁化性质.
Ti90Cr10 and Co8oCr20/Ti90Cr10 thin films were prepared by pulsed laser deposition on Si (100) substrate at various temperatures. The relations between crystal structure and substrate temperature were investigated by XRD and the result revealed that as the substrate temperature increased, the film changed from amorphous state to crystal state gradually. Furtbermore, the grain size and lattice parameters of Ti90Cr10 film were measured by the XRD spectrum. The surface and cross-sectional morphology of Ti90Cr10 film were characterized by TEM. The hardness, as well as boundary adhesion strength of the Ti90Cr10 film was measured by nano-indenter and the result indicates that increase of the substratc temperature is beneficial to increasing the adhesion of the film. The magnetic properties of Co80Cr20/Ti90Cr10 film were studied by VSM and the coercivity was observed to increase with decreasing film thickness. For the Co80Cr20 (8nm)/Ti90Cr10 (14 nm) film prepared at substrate temperature of 600%: in vacuum, its coercivity is 65.25 kA/m and the squareness is about 0.86. Finally, the magnetization properties of the Co80Cr20/Ti90Cr10 Crlo are also discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第1期522-528,共7页
Acta Physica Sinica