平面型RTD与BJT构成的串联单元特性分析

Analysis of the Series Element of Planar RTD Connected with BJT

采用了n+-GaAs衬底和硼离子注入的新型工艺实现了共振隧穿二极管(RTD)的平面化,解决了台面型RTD工艺的不足,得到常温电流峰谷比为2.51∶的平面型RTD(PRTD);利用高级设计系统ADS电路模拟和实验测量对PRTD与BJT串联单元的不同串联方式的电压-电流特性进行了深入分析。这一特性的研究对RTD与异质结双极晶体管(HBT)、MOSFET、高电子迁移率晶体管(HEMT)等三端器件的结合具有普遍意义。

A novel process for ^n＋-GaAs substrate and boron iron implantation was adopted to planarize resonant tunneling diode （RTD）, which can solve the shortfalls of conventional mesa RTD structure. Using this process, the planar RTD （PRTD） with PVCR of 2.5：1 at room temperature was got. The I-V characteristics of different connections of RTD/BJT were also dealt with by using both advanced design system （ADS） simulation and experiments. This analysis has universal significance in the research of RTD integration with other three-terminal devices such as HBT, MOSFET and HEMT, etc.