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适用于Flash Memory的负高压泵的实现 被引量:7

Implementation of Negative High-Voltage Charge-Pump for Flash
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摘要 提出一种适用于单电源,低电压供电的FlashMemory的负高压电荷泵的实现方法。在分析传统电荷泵工作原理的基础上,结合Flash工作电压和参数要求,提出三阱工艺,无阈值损失的负高压电荷泵电路结构。最后在0.22!mFlash工艺下给出测试结果。 An implementation of negative high-voltage charge pump used for single and low-voltage power flash memory is proposed in this paper. Based on the analysis of the traditional charge pump, referred to the working conditions and parameter requirements of Flash memory, a new structure of triple-well negative high-voltage charge pump without threshold loss is brought forward. The result of test (SMIC 0.22um Flash) is given at the last section.
出处 《微电子学与计算机》 CSCD 北大核心 2007年第1期21-24,共4页 Microelectronics & Computer
关键词 半导体技术 快闪存储器 电荷泵 负高压 三阱工艺 Semiconductor technology, Flash memory, Charge pump, Negative high voltage, Triple-well technology
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参考文献6

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