摘要
提出一种适用于单电源,低电压供电的FlashMemory的负高压电荷泵的实现方法。在分析传统电荷泵工作原理的基础上,结合Flash工作电压和参数要求,提出三阱工艺,无阈值损失的负高压电荷泵电路结构。最后在0.22!mFlash工艺下给出测试结果。
An implementation of negative high-voltage charge pump used for single and low-voltage power flash memory is proposed in this paper. Based on the analysis of the traditional charge pump, referred to the working conditions and parameter requirements of Flash memory, a new structure of triple-well negative high-voltage charge pump without threshold loss is brought forward. The result of test (SMIC 0.22um Flash) is given at the last section.
出处
《微电子学与计算机》
CSCD
北大核心
2007年第1期21-24,共4页
Microelectronics & Computer
关键词
半导体技术
快闪存储器
电荷泵
负高压
三阱工艺
Semiconductor technology, Flash memory, Charge pump, Negative high voltage, Triple-well technology