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一种显示控制与驱动芯片中的高速双端口SRAM设计 被引量:1

Design of an Embedded High Speed Dual-Port SRAM in Display Control/Driver ICs
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摘要 文章详细描述了一种集成在OLED显示控制驱动芯片中的双端口SRAM的设计,从电路和版图两方面对SRAM的核心部分进行了详细描述,并且设计了一种可用于OLED显示控制驱动芯片中的96×64×16位的双端口SRAM,最后给出了测试结果,验证了设计的正确性。 This paper concentrates on providing a practical example addressing difficulty in circuit and layout design of dual-port SRAM (DPSRAM) which is embedded in display control/driver circuit. The initial part of this article explores the special requirements and characteristics of embedded DPSRAM used in the display control/driver circuits. A detailed design of DPSRAM is provided in the next part, including the memory cell, decoders and Sense Amplifier (SA). Next presents a brief summary of the AC electrical characteristics of this embedded DPSRAM with the layout of the whole chip attached. Last gives the test report of the SRAM to verify the correctness of DPSRAM.
作者 陈亮 陈志良
出处 《微电子学与计算机》 CSCD 北大核心 2007年第1期98-101,共4页 Microelectronics & Computer
关键词 SRAM 双端口 片内集成 OLED SRAM, Dual port, Embedded, OLED
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参考文献5

  • 1Jan M Rabaey,Anantha Chandrakasan,Borivoje Nikolic.Digital integrated circuits a design perspective (Second Edition),2004:657~663
  • 2Bernhard Wicht,Thomas Nirschl,Doris Schmitt Landsiedel.Yield and speed optimization of a latch type voltage sense amplifier,IEEE Journal of solid-state circuits,2004,39(7):1148~1158
  • 3Tsuguo Kobayashi,Kazutaka Nogami,Tsukasa Shirotori,Yukihiro Fujimoto.A current controlled latch seuse amplifier and a static power saving input buffer for low power architecture,IEEE Journal of solid-state circuits,1993,28(4):523~527
  • 4Ding Ge,Zhiliang Chen.On chip display data RAM in LCD/OLED driver/control ICs for mobile application,2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings,2004,F5-8
  • 5刘岩,候朝焕.采用0.18μm CMOS工艺的多端口SRAM设计[J].微电子学与计算机,2005,22(9):103-105. 被引量:2

二级参考文献3

  • 1BehzadRazavi著 陈贵灿 程军.模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003..
  • 2JanM.Rabaey Digital Integrated Circuits:A Design Perspective[M].北京:清华大学出版社,2001..
  • 3B T Wang, James B. Kuo A Novel Two-Port 6T CMOS SRAM Cell Structure for Low-voltage VLSI SRAM with Single-Bit-Line Simultaneous Read-and-Write Access Capability ISCAS 2000-IEEE International Symposium on Circuits and Systems, 2000, 28~31.

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