摘要
重点研究了直拉(CZ)硅中氧沉淀在快速热处理(RTP)和常规炉退火过程中的高温消融以及再生长行为.实验发现,RTP是一种快速消融氧沉淀的有效方式,比常规炉退火消融氧沉淀更加显著.硅片经RTP消融处理后,在氧沉淀再生长退火过程中,硅中体微缺陷(BMD)的密度显著增加,BMD的平均尺寸略有增加;而经过常规炉退火消融处理后,在后续退火过程中,BMD的密度变化不大,但BMD的尺寸明显增大.氧沉淀消融处理后,后续退火的温度越高,氧沉淀的再生长越快.
The effects of high temperature treatment by conventional furnace annealing and rapid thermal processing （RTP） on the dissolution and the re-growth behavior of oxygen precipitation in Czochralski （CZ） silicon wafers are investigated. It is found that RTP is a rapid and effective way to dissolve oxygen precipitation in comparison with conventional furnace annealing. After dissolution treatment by RTP,the density of bulk micro-defects （BMDs） increases remarkably during the sub- sequent anneal for the rerowth of oxygen precipitation, while after dissolution treatment by conventional furnace annea- ling, the density of BMDs is nearly unchanged during the subsequent annealing for the re-growth of oxygen precipitation. The higher the subsequent annealing temperature,the faster the re-growth of oxygen precipitation in silicon wafers subjected to the dissolution treatment.
基金
国家自然科学基金(批准号:60225010)
教育部新世纪优秀人才支持计划资助项目~~
关键词
直拉单晶硅
氧沉淀
消融
再生长
Czochralski silicon
oxygen precipitation
dissolution
re-growth
