摘要
为了增强单电子晶体管中栅极和沟道量子点之间的耦合度,提高增益调节系数,发展了结合预制控制栅、电子束直写、各向异性腐蚀和热氧化的制备工艺.在室温下对器件的电学特性进行测量,观察到了典型的库仑振荡效应和负微分电导效应.基于量子点能级分立模型,分析了器件的输运原理,重点研究了强耦合作用对器件输运性质的影响.研究表明,通过控制量子点的热氧化时间,将器件量子点尺寸减小到7·6nm,增益调节系数提高到0·84.
To enhance the coupling strength between the gate and the quantum dot （QD） confined in the transport channel and improve the gain modulation factor, we develop a novel type of Si single-electron transistor （SET）. Clear coulomb blockade oscillations and negative differential conductance （NDC） are observed at room temperature （RT）. Based on the model of quantized energy levels of QDs,we analyze the transport mechanism of the fabricated devices,especially the effect of strong gate-dot coupling on the transport characteristics. The results demonstrate that 7.6nm QDs and a large gain modulation factor of 0. 84 by controlling the thermal oxidation are achieved.
基金
国家自然科学基金(批准号:60225014)
江苏省自然科学基金(批准号:DK2004211)资助项目~~
关键词
单电子晶体管
库仑阻塞
库仑振荡
负微分电导
single-electron transistor
coulomb blockade
coulomb oscillations
NDC
