高效率n-nc-Si:H/p-c-Si异质结太阳能电池

High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells

采用热丝化学气相沉积技术(HWCVD),系统地研究了纳米晶硅层(尤其是本征缓冲层)的晶化度以及晶体硅表面氢处理时间对nc-Si∶H/c-Si异质结太阳能电池性能的影响,通过C-V和C-F测试分析了不同氢处理时间和本征缓冲层氢稀释度对nc-Si∶H/c-Si界面缺陷态的影响,运用高分辨透射电镜观察了不同的本征缓冲层晶化度的nc-Si∶H/c-Si异质结太阳能电池的界面,优化工艺参数,在p型CZ晶体硅衬底上制备出转换效率为17·27%的n-nc-Si∶H/i-nc-Si∶H/p-c-Si异质结电池.

High-efficlency n-nc-Si ： H/p-c-Si heterojunction solar cells are fabricated by hot-wire chemical vapor deposition （HWCVD） at low temperatures. The effects of the crystalline fraction of nc-Si ： H,especially in the buffer layer,and hydrogen treatment time on the performance of the solar cells are investigated. The interface between nc-Si ： H and c-Si is examined by HRTEM. The influence of hydrogen dilution of the buffer layer on the structure of the interface is analyzed. By optimizing the deposition parameters,an nc-Si ： H/c-Si heterojunction solar cell with Jsc = 40.8mA/cm^2 , Voc = 576. 3mV, FF = 73.75% ,and η= 17. 36% has been achieved on CZ single crystalline silicon.