摘要
通过提高InGaN量子阱结构的生长温度,降低量子阱In组分的掺入效率,提高InGaN/GaN量子阱结构生长质量,缩短LED输出波长等手段,实现了紫光LED高效率输出.采用高分辨率X射线双晶衍射、扫描隧道显微镜和光致发光谱技术研究了高温生长InGaN/GaN多量子阱的结构和光学特性.封装后的300μm×300μmLED器件在20mA的注入电流下输出功率为5·2mW,输出波长为408nm.
High efficiency output of a violet LED is obtained by increasing the growth temperature of InGaN quantum wells, reducing the intermingling efficiency of In content,and improving the quality of InGaN/GaN. High-resolution X-ray double crystal diffraction and a scanning tube microscope are used to characterize the configuration and optical characteristics of InGaN/GaN MQW grown at high temperatures. The output power of a packaged 300μm × 300μm LED is 5.2mW under a 20mA input current,the output wavelength is 408nm.
