InP（Yb）晶体结构和发光特性的研究

Study on the Luminescent Properties and Structure of Yb-Implanted InP (Yb)

用离子注入法配合优化退火新技术制成了一种高效发光材料ＩｎＰ（Ｙｂ）；用高灵敏度激光光谱仪测量了该材料的发光特性（ＰＬ），并研究了离子注入和退火过程中发光特性的变化，对ＰＬ谱峰作出辨认；用Ｘ射线衍射谱（ＸＤＳ）测量分析晶格结构和注入损伤（缺陷）；研究了原材料的掺杂（Ｓｎ）对发光特性的影响；较深入地探讨了该材料的发光机制，并用一改进ＲＥ发光中心模型阐明该材料的激发发光过程。

A new efficient luminescent material of rare earth Yb doped InP(Yb)was prepared by ion implanted method accompanied by a new optimal annealingthchnigue. The Photoluminescent (PL) properties of the material and the peak. changes of PL spectra of InP (Yb) crystals during RE (Yb) implantation and annealing processes have been studied by high discriminative laser spectrome ter. The structure and implanted damage(defects)of these crystals have been analyzed systematically by X-ray diffractional spectra (XDS) and PL. The luminescent mechanism of the material has been investigated deeply. And these results have been interpreted by a improved model of rare earth luminescent center.