硅材料基本物理参数的高温模型与计算

The High Temperature Models and Calculation of Silicon Materials' Basic Physical Parameters

介绍了硅材料本征载流子浓度ｎｉ、禁带宽度Ｅｇ、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。其中ｎｉ、Ｅｇ和、模型分别适用于３００～１２００Ｋ和３００～７００Ｋ，μ的模型在２５０～５００Ｋ定温区及１０１３～１０２０ｃｍ－３杂质浓度范围内，最大误差小于１３％。

In this paper, the high temperature models and calculation results of silicon materials' intrinsic carrier concentration m, energy gap Eg, effective mass of electron and hole as well as carrier mobility p are introduced. The models of ni .Eg and that of mn mp are suitable for use in the temperature range of 300￣1 200 Kand 300￣700 K, respectively. The error for p model is less than 13% in the condition of temperature range of 250￣500 K and doping range of 1013￣1020 cm-3.