WSi_2栅和Si栅CMOS／BESOI的高温特性分析

Analysis of High Temperature Property of WSi_2 Gate and Si Gate CMOS/BESOI

用厚膜ＢＥＳＯＩ（ＢｏｎｄｉｎｇａｎｄＥｔｃｈ－ｂａｃｋＳｉｌｉｃｏｎ－Ｏｎ－Ｉｎｓｕｌａｔｏｒ）制备了ＷＳｉ２栅和Ｓｉ栅４００７ＣＭＯＳ电路，在室温～２００℃的不同温度下测量了其Ｐ沟、Ｎ沟ＭＯＳＦＥＴ的亚阈特性曲线，分析了阈值电压和泄漏电流随温度的变化关系。

CMOS circuits with WSi2 gate or St gate were fabricated on thick film BESOI(Bonding and Etch-back Silicon-On-Insulator) materials. Their p-and N-channel MOSFET's subthreshold characteristic curves were measured. The temperature dependence of the threshold voltage and leakage current were analyzed.