摘要
报道Ｋａ频段ＧａＡｓ单片平衡混频器的设计和研究结果。用自行开发的“ＴＵＭＭＩＸＥＲ”软件进行电路设计，工艺以半绝缘ＧａＡｓ为衬底，采用ＮｂＭｏ／ＧａＡｓ接触形成肖特基势垒二极管，以ＳｉＯ２和聚酰亚胺双介质为保护膜，增强了工艺的成功率。研制成功的芯片尺寸为：２ｍｍ×３ｍｍ×０．２ｍｍ，在ｆ＝３１～３６ＧＨＺ范围内ＮＦＳＳＢ≤１０ｄＢ，最佳点ｆ＝３２．２ＧＨｚＮＦ．ＳＳＢ＝８．７ｄＢ［ｆＩＦ＝１．２ＧＨｚ］。
The desegh,fabrication and characterization of a Ka-band monolithic Balanced mixer are eesrcibed in this paper, The design of the circuti is performed by An in-house developed prpgram TUMIXER, the Ka-band monoliothic GaAs balanced Mixer is fabricated by using semi-insulating GsAs single crystal as substrafte, BbmO/GaSA contactb as Schottky barrier diodes, and SiO2and polyimide coating as Protecting film.The chip size is 2mm×3mm×0.2mm.The mixer provides a SSB Noise figure less than 10dB in th frequency rage of 31-36 GHz The best SSB noiseFigure is 8.7dB at frequency of 32.2GHz with fW of 1.2GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第4期388-392,共5页
Research & Progress of SSE
