摘要
阐述了功率ＧａＡｓＭＥＳＦＥＴ器件热阻测试中温敏参数ＶＧＳＦ和测试电流Ｉｍ的选取，给出了１～５Ｗ器件典型温敏参数的温度测试系数Ｍ与测试电流Ｉｍ的关系。讨论了测试延迟时间ｔｍｄ对△ＶＧＳＦ测量值的影响和三种校正方法。
The relations between power GaAs MESFET's temperature sensitive parameter (TSP) VGsF,TSP' S temperature coefficient M, measuring current Im and device's channel temperature Tab are studied in this paper. The typical M-lnImcurves of 1￣5 Watt power GaAs MESFETs are given. The effects of measurement delay time t.d on thermal resistance RT are also considered and three correct methods are compared.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第4期398-404,共7页
Research & Progress of SSE
关键词
砷化镓
场效应管
热阻
测试
GaAs FET Thermal Resistance Measurement
