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高能球磨法制备高电位梯度的ZnO压敏电阻 被引量:3

High voltage gradient of zinc oxide-based varistors prepared by high-energy ball milling
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摘要 为了制备高电位梯度的ZnO压敏电阻,采用了新的粉体制备方法,即高能球磨Bi2O3和Sb2O3两种添加剂12 h,再与其它氧化物共同高能球磨5h。扫描电镜及各个烧结温度下电性能、致密度的实验结果证明:此法制备的粉体压片后,1000℃烧结时,其电位梯度高达1516V/mm,漏电流为3.0μA,非线性系数为22。 The constituent oxides were prerpared by milling ZnO, Bi2O3 , Sb2O3, Cr2O3, Co2O3, MnO2 together for 5h, in which synthetic Bi2O3 and Sb2O3 powder had been firstly milled for 12h. The ZnO-based varistors were produced by sintering at 1 000℃. And the electric properties of obtained varistors are the leakage current of 3.0 μA, the nonlinear coefficient of 22, the voltage gradient of 1 516V/mm, respectively.
出处 《电子元件与材料》 CAS CSCD 北大核心 2007年第1期11-13,共3页 Electronic Components And Materials
基金 国家自然科学基金资助项目(50471045) 上海市科委纳米专项(0452nm026)
关键词 电子技术 高能球磨 ZNO压敏电阻 XRD 电性能 electron technology high-energy ball milling ZnO varistor XRD electrical property
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参考文献6

  • 1Fah C P,Wang J.Effect of high-energy mechanical activation on the microstructure and electrical properties of ZnO-based varistors[J].Solid State lonics,2000,132:107-117.
  • 2Liu H Y,Kong H,Ma X M.Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling[J].J Mater Sci,(accepted).
  • 3Gunay V.Grain growth kinetic in x CoO-6 wt.% Bi2O3-(94-x) ZnO(x=0,2,4)ceramic system[J].Ceram Int,2004,30:105-110.
  • 4Rubia M A De la.Compact shape as a relevantparameter for sintering ZnO-Bi2O3 based varistors[J].J Eur Ceram Soc,2004,24:1209-1212.
  • 5王玉平,李盛涛.新型ZnO压敏电阻片的研究进展[J].电气应用,2005,24(6):1-2. 被引量:21
  • 6严群,陈家钊,涂铭旌.纳米ZnO掺杂对压敏阀片电性能和组织的影响[J].电子元件与材料,2004,23(4):33-35. 被引量:5

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同被引文献38

  • 1陈洪存,王矜奉,臧国忠,苏文斌,王春明,亓鹏.(Nb,Mg,Al)多元掺杂对ZnO压敏材料电学性质的影响[J].电子元件与材料,2004,23(8):27-29. 被引量:10
  • 2宋晓兰,贾广平,刘辅宜.氧化锌压敏陶瓷烧结致密化过程的研究[J].无机材料学报,1996,11(1):85-89. 被引量:9
  • 3Gupta T K. Application of zinc oxide varistors [J]. J Am Cerm Soc, 1990, 73(7): 1817-- 1840.
  • 4Cho S G, Lee H, Kim H S. Effect of chromium on the phase evolution and microstructure of ZnO doped with bismuth and antimony [J]. J Mater Sci, 1997, 32: 4283--4287.
  • 5Ito M, Tanahashi M, Uehara M, et al. The Sb203 addition effect on sintering ZnO and ZnO-Bi2O3 [J]. Jpn J Appl Phys, Part 2, 1997, 36(11A): L1460--L1463.
  • 6Ott J, Lorenz A, Harren M, et al. The influence of Bi2O3 and Sb2O3 on the electrical properties of ZnO-based varistors [J]. J Electroceram, 2001, 6: 135--146.
  • 7Dey D, Bradt R C. Grain growth of ZnO during Bi2O3 liquid-phase sintefing [J]. J Am Ceram Soc, 1992, 75: 2529--2534.
  • 8Olsson E, Dunlop G L. The effect of Bi2O3 content on the microstructure and electrical properties of ZnO varistor materials [J]. J Appl Phys, 1989, 66(9): 4317--4324.
  • 9Metz R, Delalu H, Vignalou J R, et al. Electrical properties of varistors in relation to their true bismuth composition after sintering [J]. J Mater Chem Phys, 2000, 63(2): 157-- 162.
  • 10Lin C. Xu Z, Peng H, et al. Bi2O3 vaporization in microwave-sintered ZnO varistors [J]. J Am Ceram Soc, 2007, 90(9): 2791 --2794.

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