Ni-Al薄膜的制备和电性能研究

Preparation and electrical properties of Ni-Al thin films

用双靶直流磁控共溅射制备了NixAl(1-x)(0.75<x<0.8)金属间化合物薄膜及掺氧Ni-Al薄膜。利用AFM、SEM-EDS、XRD对Ni-Al合金薄膜的表面形貌、组分和晶相结构进行了表征和分析。结果表明,制备的合金薄膜表面致密平整,结晶良好,且具有(111)择优取向。合金薄膜电阻随温度呈线性变化,表现为正的电阻温度系数。氧气的引入阻碍了薄膜的晶化过程使薄膜表面粗糙度增加,晶粒细化,薄膜具有不同于合金薄膜的导电机理。

Intermetallic compounds NixAl1-x （0.75〈x〈0.8） and doped oxygen thin films were deposited by DC magnetron co-sputtering from two elemental Ni and Al targets. The morphology, composition and structure of Ni-Al thin films were investigated by SEM, AFM, EDS and XRD. The results show that the thin alloy films are density, smoothing, well crystallized and show （111） predominant orientation. The resistance of the thin films assumes linear variation along with temperature. All the thin films show positive TCR. The influences of O2 introduced into vacuum chamber were studied. The roughness of the films increased, grain size decreased, and retarded the course of crystallization. The electrical conduct mechanism is different compared with alloy thin films.