摘要
采用射频溅射工艺制备了Zn1-xAlxO透明导电薄膜。通过XRD、UV透射和电学性能测试等分析手段,研究了Al浓度对薄膜的组织结构和光电性能的影响规律。结果表明:薄膜具有c轴择优取向,随着Al浓度的增加,(002)衍射峰向高角度移动,峰强度逐渐减弱,x(Al)为15%掺杂极限浓度。x(Al)为2%时,薄膜电阻率是3.4×10–4Ω.cm。随着掺杂量x(Al)从0增加到20%,薄膜的禁带宽度从3.34 eV增加到4.0 eV。
Al-doped ZnO （AZO） thin films were fabricated on Si substrates and quart substrates by RF sputtering. The effectrs of Al content on structural, optical and electrical properties of AZO thin films were investigated by XRD, UV transmission and measurement of electrical proprties. It is found that the AZO thin films have a preferential c-axis orientation when x（Al） below 15 % （mole fraction）. With increase of Al concentration, the peak position of the （002） plane is shifted to the higher 20 value. A minimum resistivity of 3.4×10^-4Ω· cm is obtained for film doped with 2 % Al. The bandgap Eg is from 3.34 eV to 4.0 eV with increasing dopant concentration of x（Al） from 0 to 20 %.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第1期43-45,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.60390073)
预研基金资助项目(No.ZJ0508)
四川省应用基金资助项目(No.JY0290681)
关键词
无机非金属材料
AZO薄膜
组织结构
光电性能
non-metallic inorganic material
AZO thin film
structural properties
optoelectronic properties
