摘要
采用标准0．35μm SiGe HBT工艺设计了工作频段在3．1～10．6GHz的超宽带低噪声放大器。从宽带电路和高频电路设计的器件选择、电路结构选择等方面讨论了超宽带低噪声放大器的设计。结果表明，通过合适的电路结构和器件参数选择，可以采用0．35μm SiGe HBT工艺制备满足超宽带系统要求的低噪声放大器。在整个工作频段内所设计的低噪声放大器输入输出匹配S11和S22均优于-8dB，噪声系数为3．5dB，电路的工作电压为2．5V。电流消耗为4．38mA。
A 3.1-10.6 GHz ultra wideband LNA was designed using standard 0.35μm SiGe HBT process. The simulation result shows that, with careful selection of circuits structure and device parameters, it is possible to fabricate a UWB LNA using standard 0.35μm SiC, e HBT process. In the designed band, the Slland S22 of the designed LNA is better than - 8 dB, and the S21 is about 11 dB with supply voltage of 2.5 V and draws a current of 4.38 mA, and the noise figure of the LNA is 3.5 dB.
出处
《北京大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2007年第1期78-81,共4页
Acta Scientiarum Naturalium Universitatis Pekinensis
