α-Si:H多层膜切面电镜观察分析

THE OBSERVATION AND ANALYSIS OF α-Si:HMULTILAYER FILMS SECTIONS BY SEM

本文制备了六种不同结构的 α-Si:H 多层膜结构,对其切面进行了扫描电镜观察分析.结果表明:辉光法生长 α-Si:H 膜过程中存在沉积和刻蚀一对对抗性矛盾,在常规工艺下各层界面不明显存在,在特殊条件下,可能生长出尺度不同的微晶镶嵌在非晶网络中。

In this paper six kinds of a-Si:Ⅱ multilayer film structures are fabri-cated.Their sections are observced and analyzed by Scanning Electron Microscope(SEM).The results show that there exists a antagonistic contradiction of deposition andetching in the process of glowing a—Si:H films by glow discharge.By the common technolo-gy,the interfaces among every layer don't exist obviouslu On the special conditions,it ispossible to form crystallites and to get into amorphous network.