硅n^+-p结中金深受主能级DLTS中的反常现象

THE ANOMALOUS PHENOMENA ON DLTS OF GOLD DEEP ACCEPTOR LEVEL IN Si n^+-P JUNCTION

在研究硅n^+-p结中金深受主能级E_A的DLTS信号强度(峰高)与多子脉冲的关系中发现,当脉冲宽度宽于1μs时,峰高反而随着脉冲宽度增加而单调下降。给出了典型的实验结果,并指出这是由于E_A同时具有多子及少子两种响应区的结果。

The relationship between the majority carrier pulse width tp and DLTS' intensity of gold acceptor EA in Si n+ -p junction is studied. It is found that the DLTS' intensity decreases monotonously with the increasing pulse width when tp>1μs. Some typical experimental results are given. The EA has two response regions: the majority carrier response region and minority carrier one. Just the two response regions caused the anomalous phenomena.