摘要
本文用标准的松弛方法研究了结型场效应晶体管的压磁电效应。利用“准平面”拉普拉斯方程及有限差分法计算了不同栅电压、漏电压以及n沟道硅器件不同宽长比的压力灵敏度和磁灵敏度。在P≠0,B=0,器件宽长比为W/L=1/2—1时,电流性压力灵敏度约为:2.5％·cm^2/N。据此,提出了一种有良好工作稳定性及噪声性能的力学量敏感器件——结型场效应力敏管(Junction field effect-pressure sensor)。
The pressure-magnetoelectric effect of JFET is discussed by using standard relaxation techniques. A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L), gate voltages (VCs) and drain voltages (VDs) is made. The results show that when P≠0,B≠0, the current-pressure sensitivity is about 2.5%·cm2/N, supposing W/L = 1/2-1. A junction field effect-pressure sensor with high stability and low noise is designed.
关键词
JFET
压磁电效应
压阻效应
Tensoresistive effect of JFET
Pressure-magnetoelectric effect
Relaxation technique
Finite-difference numerical method
