SPT^+,下一代低损耗高压IGBT

SPT^+,the Next Generation of Low-Loss HV-IGBTs

继高压软穿通(Soft-Punch-Through,SPT)IGBT的成功推出,本论文将介绍采用新研发的SPT+技术的下一代HV-IGBT。新型IGBT,除了与成熟的HV-SPT IGBT一样,具有光滑的开关波形和极佳的SOA性能指标,同时通态和关断损耗大大降低。

Following the successful introduction of the high voltage Soft-Punch-Through （SPT） IGBT range, we introduce in this paper our next generation of HV IGBTs employing the newly developed SPT^＋ technology. The new IGBTs exhibit significant loss reduction in terms of on-state and turn off losses while maintaining smooth switching waveforms and the extreme SOA performance characteriaic of the well--established HV SPT IGBTs.