摘要
设计了一款具有高稳定性，低功耗的带隙基准源，采用1．5μm BiCMOS工艺制造，在-40℃～100℃它们的平均温度系数为29×10^-6／℃，电源电压抑制比为60dB。在电源电压为3．7V的情况下工作功耗为144μw，低功耗高精度的特性使它非常适合在混合信号设计的IC中应用。
Design a bandgap voltage reference which is high stability and low power. They can be fabricated in 1.51μm BiCMOS process, the temperature coefficient is 29 × 10^-6/℃, and the PSRR is 60dB. With the3.7V single supply voltage, the power consumption is only 144μWo Due to the characteristics of the low power consumption and high precision, they are very suitable for mixed - signal ICs.
出处
《微处理机》
2006年第6期7-8,11,共3页
Microprocessors
