摘要
本文研究了超薄的金属/LB绝缘膜/半导体(MLS)结构的C-V和I-V特性,理论分析与实验结果相一致,结论如下:(1)超薄MLS结构具有正常的C-V特性和I-V特性;(2)以LB薄膜作为绝缘层可调整肖特基器件势垒高度。
C-V and I-V characteristics of ultratllin metal/LB insulating films/semiconductor structure are studied. Theoretical analysis are well in accord with experimental results. The results indicate that: (1) Ultrathin MLS structure has normal C-V and I-V characteristics; (2) It is possible to modify the barrier height of Schottky devices by using LB thin films as insulators.
基金
国家自然科学基金
关键词
LB绝缘薄膜
C-V特性
I-V特性
LB insulating thin films
C-V characteristics
1-V characteristics
