摘要
禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文利用p-n结反向扩散电流的温度特性和借助于线性外推法,提出了一种确定绝对零度时禁带宽度的新方法。由于发射区重掺杂,本文考虑了载流子的费米-狄拉克统计分布。提出了确定发射区中少子复合寿命的方法。该方法简便实用。
Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at OK is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice.
关键词
硅晶体管
掺杂
禁带宽度
复合寿命
Highly doped emitter
Energy gap
Minority-carrier recombination lifetime
