摘要
本文在实验的基础上,提出了光电导开关等效时变电导的新表达式。据此分析了光电导开关在高速脉冲的产生和取样以及在光电子相关测量中的特性。分析的结果与实验基本一致,为将来利用光电子相关方法测量电子器件打下了基础。在实验中采用较为简单的工艺,获得光电导开关的上升时间为100ps。相信,只要增加离子轰击处理,上升时间可望达到10ps。
On the basis of experiments, a new conductive expression of photoconductive switch is proposed. According to this expression, the generation and sampling of high speed pulses, as well as the characteristics of photoelectron correlation measurement are analysed. The analysis agrees with experimental results and will be useful to the electronic measurement by photoelectron correlation method. A rather simple processing of devices is adopted. The rise time of photoconductive switch is 100 ps. It is sure that the rise time may obtain a ten-fold improvement only with ion-bombardment to the substrate.
关键词
半导体器件
相关测量
光电导开关
Photoconductive switch
Transient measurement
Correlation measurement
