摘要
采用直流磁控溅射技术沉积了Ni49.54Mn29.59Ga20.87磁驱动形状记忆合金薄膜。XRD结果表明,Ni49.54Mn29.59Ga20.87薄膜室温下为5层调制型结构马氏体。X射线光电子能谱(XPS)分析表明,放置于空气中2个月的沉积态薄膜表面吸附少量氧和碳杂质。随Ar+刻蚀深度的增加,表面C杂质易被剥蚀掉,而部分氧杂质以MnO状态存在;Ni、Mn、Ga元素含量由薄膜表面向内层逐渐增加,化学价由正价向零价转变。
Ni49.54 Mn29.59 Ga20.87 magnetically driven shape memory alloy thm film taas been deposited on silicon substrates by means of D. C magnetron sputtering technique. XRD pattern shows that the thin film is five-layered martensite phase at room temperature. The surface characteristics of the thin film are also investigated by X-ray electron spectroscopy (XPS). The results show that the film surface absorbs lots of O and C when it was put into air for 2months. With the increasing of Ar^+ sputtering depth, the contaminations of C element can be removed,but contaminations of O formed MnO exist in the film. The contents of Ni,Mn and Ga are increasing from the surface to inside,along with the transition from the ionic bonded atom to metal atom.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第1期50-52,共3页
Journal of Functional Materials