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BSCCO超导体中均匀排布ZnO缺陷的纳米复合制备 被引量:1

Introduce uniformly distributed ZnO nano-defects into BSCCO superconductors by nano-composite method
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摘要 通过纳米复合掺杂的方法,在BSCCO超导体中引入了均匀排布的纳米ZnO缺陷。研究并比较了不同掺杂方法对超导体性能以及ZnO在超导体中分布状态的影响。测试结果表明,不同掺杂方法所制备的样品均有明显的超导现象;经HRSEM表征,纳米复合掺杂所得样品中ZnO缺陷呈线状均匀排布,粒径约为100nm。 Uniformly distributed ZnO nano-defects were introdueed into the BSCCO supereonduetors, using nano-eomposite method. The performanee of supereonduetors and distribution of ZnO in supereonduetors aeeording to different doping methods were researched. The results of standard four-probes method indicated that all those samples fabricated by different doping methods had obvious performance belonging to HTS. From the HRSEM images, we could see nano-ZnO(about 100nm) defects linearly distributed on the surface of samples fabrieated by nano-eomposite doping method.
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第1期157-160,共4页 Journal of Functional Materials
基金 国家杰出青年科学基金资助项目(50025207) 国家自然科学基金资助项目(50272054)
关键词 超导 纳米复合 掺杂 BSCCO ZNO superconductor nano-composite doping BSCCO ZnO
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参考文献13

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