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双极晶体管不同温度的退火效应与机理 被引量：1

The effect and mechanism of the bipolar junction transistor in different temperature
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摘要 研究了双极晶体管不同温度下的退火效应,发现双极晶体管的退火与温度有关,而且不同类型晶体管的退火效应是有差异的,最后文章讨论了其中可能的内在机制。 The annealing-effect of bipolar junction transistor in different temperature is investigate＆ It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealingeffect of the different type transistor is dissimilar. The possible mechanism is discussed
作者 汪东 陆妩 任迪远 李爱武 匡治兵 张华林
机构地区 中国科学院新疆理化技术研究所 长沙理工大学
出处 《核电子学与探测技术》 CAS CSCD 北大核心 2007年第1期150-153,共4页 Nuclear Electronics & Detection Technology
关键词 双极晶体管 退火效应 界面态 bipolar-junction-transistor effect of anneal excitions interface-state
分类号 TN322.8 [电子电信—物理电子学]
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参考文献12

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共引文献14

同被引文献8

  • 1ZHENGY Z, LU W, REN D Y, et al. Impact of doped boron concentration in emitter on high-and-low-dose-rate damage in lateral Lpnp transistors [J]. Journal of Semiconductors, 2010, 31 (3) : 034003-1-034003-5.
  • 2曹光明.抗辐射加固集成稳压电源的最新设计和研究[J].Microelectronics,1988,18(6):68-72.
  • 3NOWLIN R N. Total-dose gain degradation in modern bipolar transistors [D]. Tucson, AZ, USA: The University of Arizona, 1993 : 42 - 50.
  • 4PERSHENKOV V S, MASLOV V B, CHEREPKO S V, et al. The effect of emitter junction bias on the low dose- rate radiation response of bipolar devices [J]. IEEE Transactions on Nuclear Science, 1997, 44 (6) : 1840 - 1849.
  • 5NOWLIN R N, FLEETWOOD D M, SCHRIMPF R D, et al. Hardness-assurance and testing issues for bipolar/ BiCMOS devies [J]. IEEE Transactions on Nuclear Science, 1993, 40 (6) : 1686 - 1693.
  • 6刘恩科,朱秉升,罗晋生.半导体物理基础[M].陕西:西安交通大学出版社,1998:379.
  • 7李泽宏,张磊,谭开洲.总剂量辐照加固的功率VDMOS器件[J].电子科技大学学报,2008,37(4):621-623. 被引量：12
  • 8费武雄,陆妩,任迪远,郑玉展,王义元,陈睿,王志宽,杨永晖,李茂顺,兰博,崔江维,赵云.不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响[J].核技术,2010,33(4):274-277. 被引量：7

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核电子学与探测技术
2007年 第1期

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