溶胶-凝胶方法制备ZnO:Al薄膜及其制备工艺条件研究

Preparation of the ZnO∶Al Thin Films by Sol-Gel and Study on Their Preparation Technics Conditions

采用Sol-Gel工艺在玻璃基片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al3+离子掺杂的ZnO透明导电薄膜ZnO∶Al(ZAO薄膜).并研究了退火温度、Al掺杂量等对其光电性能的影响.结果表明,溶胶-凝胶法制备ZAO薄膜的最佳工艺条件为:溶胶浓度0.75 mol/L、掺杂量1.5 atm%,镀膜层数10层(厚度约为136 nm)、退火温度600℃.

The Al^3＋ -doped ZnO transparent conducting films ZnO：Al （ZAO thin films） which have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface, high visible transmittance from 400--800 nm and high conductivity were prepared on glass substmtes by Sol-Gel method. The influences that affected the films＇ optical and electrical properties, such as the annealing temperature, the Al^3＋ -doped quantity etc. were studied. The results proved that the best craft conditions to prepare ZAO thin films by Sol-Gel method were as follows： sol concentration 0.75 mol/L, doped quantity 1.5 atm%, coating layer 10 layers（thickneas about 136 nm）, annealing temperature 600 ℃,