摘要
本文用DLTS谱仪研究了SiO_2限制的InGaAsP/InP双异质结发光管中的深能级。结果表明:只有在p-n结位于p-InP/n-InGaAsP界面处的个别器件中,有△E=0.24eV的多子陷阱。
The deep level in InGaAsP/lnP DH LED have been studied by DLTS method. The results show that when the p-n junction located in the interface of the p-inP/n-In GaAsP, there is deep level in some InGaAsP/lnP DH LED. The activation energy △E is 0.24eV.
