摘要
采用固相烧结法制备了Nd掺杂Bi4-xNdxTi3O12(x=0,0.25,0.5,0.75,1)层状铋系钙态矿无铅介电陶瓷。利用XRD、SEM和宽频LCR数字电桥测试手段研究了Nd掺量、烧结温度和保温时间对Bi4-xNdxTi3O12(BNT)陶瓷晶相、显微结构及介电性能的影响。研究表明,本实验中Nd的最佳质量掺量为0.75,最佳烧结温度为1 050℃,保温时间为4 h,BNT陶瓷具有良好的介电性能。
Bi4-xNdxTi3O12（ x = 0,0.25,0.5,0.75,1） layered bismuth- based lead- free dielectric ceramics were fabricated by the solid-synthesis. The effects of the amount of Nd doping, sirltering temperature and annealing time on BNT ceramics＇ crystal structure, microstructure and dielectric properties have been analyzed by XRD, SEM and LCR meter. The results indicated that the BNT ceramics with Nd doping of 0.75% annealed at 1 050 ℃ for 4 hours exhibited good dielectric pwperties.
出处
《济南大学学报（自然科学版）》
CAS
2007年第1期8-11,共4页
Journal of University of Jinan(Science and Technology)
