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Dielectric properties of BiFeO_3-PbTiO_3 thin films prepared by PLD

Dielectric properties of BiFeO_3-PbTiO_3 thin films prepared by PLD
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摘要 BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor (tanδ) of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured; the film deposited under 6.665 Pa exhibits low leakage current, low dielectric loss (0.017-0.041) and saturated hysteresis loop with polarization (Pr) value and coercive field (Ec) of 3 μC/cm2 and 109 kV/cm. BiFeO3-PbTiO3 （BFO-PT） thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition （PLD） technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor （tanδ） of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured; the film deposited under 6.665 Pa exhibits low leakage current, low dielectric loss （0.017-0.041） and saturated hysteresis loop with polarization （Pr） value and coercive field （Ec） of 3 μC/cm^2 and 109 kV/cm.
作者 陈蕊 俞圣雯 张冠军 程晋荣 孟中岩
机构地区 Department of Electronic Information Material
出处 《中国有色金属学会会刊：英文版》 CSCD 2006年第B01期116-118,共3页 Transactions of Nonferrous Metals Society of China
基金 Project(04A1B18) supported by Shanghai Municipal Education Commission Project(50472098) supported by the National Natural Science Foundation of China Project(04qmx1440) supported by Shanghai Rising Star Program, China
关键词 BiFeO3-PbTiO3薄膜 脉冲激光沉积法 制备 介电性质 铁电性质 dielectric ferroelectric BiFeO3-PbTiO3 thin Film, PLD
分类号 TB383.2 [一般工业技术—材料科学与工程]
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参考文献10

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中国有色金属学会会刊：英文版
2006年 第B01期

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