摘要
The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods.
The （100）-orientated diamond film was deposited by hot-filament chemical vapor deposition （HFCVD） technology with a positive DC bias voltage. The morphology, X-ray diffraction （XRD）, RMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and （100）-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods.
出处
《中国有色金属学会会刊：英文版》
CSCD
2006年第B01期313-316,共4页
Transactions of Nonferrous Metals Society of China
基金
Project (60577040) supported by the National Natural Science Foundation of China
Project(0404) supported by Shanghai Foundation of Applied Materials Research and Development
Project(T0101) supported by Shanghai Leading Academic Disciplines
