衬底温度对纳米硅薄膜结构性能的影响

Effects of Substrate Temperature on Structure Properties of Nanocrystalline Silicon

在等离子体化学气相沉积系统中采用高氢稀释硅烷蚀刻法制备了纳米硅薄膜。系统地研究了衬底温度对ｎｃ－Ｓｉ：Ｈ薄膜的结构性能的影响。结果表明随着衬底温度从２４０℃升高到３２０℃，薄膜的晶态率从２４％增大为６５％，平均晶粒尺寸从６ｎｍ增大为１０ｎｍ。当衬底温度≤２００℃时，生成薄膜为ａ－Ｓｉ：Ｈ薄膜。文中还对纳米硅薄膜的晶化机制进行了讨论。

Nanocrystalline silicon (nc-Si:H) films have been prepared by a glow discharge plasmachemical vapour debation(PCVD) system using heavily hydrogen(H2) diluted silane(SiH4). Theeffects of subotate temperature(Ts)on the structUre properties of nc-Si: H films have beensystematically. When the Ts increase from 240℃ to 320℃, the volume fration of the crystallinePhase of nc-Si:H fi:H films increases from 24% to 65% and the mean crystallite size from 6um to10um. When the Ts≤200℃,the deposited films are amorphous. The crystallization mechanism ofnc-Si:H film is discussed in this paper.