摘要
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
We use the extended gate field effect transistor （EGFET） as the structure of the chlorine ion sensor, and the chlorine ion ionophores （ETH9033 and TDDMAC1） are incorporated into solvent polymeric membrane （PVC/DOS）, then the chlorine ion selective membrane is formed on the sensing window, and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions, then changes further gate voltage and drain current to detect chlorine ion concentration. We will study non-ideal effects such as temperature, hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper, these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2006年第A03期242-243,共2页
Rare Metal Materials and Engineering
