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Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement

Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement
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摘要 Porous materials used for humidity sensing have been commercialized.In this paper,the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS)are studied.PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions.Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity,short response time (less than 30 seconds),and long-term stability. Porous materials used for humidity sensing have been commercialized. In this paper, the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS) are studied. PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions. Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity, short response time (less than 30 seconds), and long-term stability.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期372-374,共3页 Rare Metal Materials and Engineering
基金 National Natural This work was supported Science Foundation of P. R by the China (Grant number: 69666001) West Glory project of Chinese Academy of Science.
关键词 porous silicon humidity sensing characteristics P-N junctions porous silicon humidity sensing characteristics P-N junctions
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