加偏置电场量子阱中二次谐波产生系数的计算

Optical second-harmonic generation in quantum wells of biased electric-field

利用量子力学中的密度矩阵算符理论导出了加偏置电场量子阱中的二阶非线性光学极化率,得到了该系统的二次谐波产生系数的解析表达式。以典型的G aA s/A lG aA s量子阱为例作了数值计算,结果表明:二次谐波产生系数比相应体材料中的二次谐波产生系数大10倍以上,同时偏置电场强度对该系统的二次谐波产生系数有较大的影响,为实验上研究量子阱的非线性光学效应提供了必要的理论依据。

The optical second-harmonic generation in quantum wells of biased electric-field is studied. The analytic expression of second-harmonic generation coefficient of this system is derived by means of density matrix approach and the iterative method. The numerical results are presented for a typical GaAs/A1GaAs quantum wells of biased electric-field. The results show that the second-harmonic generation coefficient in this system is over 10 times larger than that in bulk GaAs material and it will change with the change taking place in electric field F.