摘要
采用溶胶-凝胶(Sol-Gel)法制备铁电Bi4Ti3O12 (BIT)薄膜,研究退火温度对其微观特性的影响,以掌握制备工艺中最佳退火温度。研究表明,随着退火温度的增加,BIT薄膜的c轴取向生长更明显,晶粒尺寸增加,同时表面粗糙度增加;从退火750℃开始,晶粒开始呈棒状生长;当温度高于850℃时,薄膜的c轴生长取向增长趋势不再明显。退火时间对薄膜的相结构和生长取向没有明显影响。
In order to master the correct technics, in this experiment, we use Sol-Gel method to prepare BIT film to research the anneal temperature＇s effect on the micro-structure of the film. The result shows that with the increasing of the temperature, c-orientation of BIT is improved, the size of the crystal is getting bigger. When higher than 750℃, the crystals begins to growth in stickshape. When higher than 850℃, the trend of c-oriented growth slows down.
出处
《信息记录材料》
2007年第1期51-54,共4页
Information Recording Materials
