摘要
采用传统陶瓷工艺方法制备了La2O3掺杂(Bi1/2Na1/2)0.94Ba0.06TiO3(BNBT6)无铅压电陶瓷,系统地研究了La2O3掺杂对该体系陶瓷介电、压电性能与微观结构的影响。结果表明:该体系具有很高的压电常数,是单一的钙钛矿结构,La2O3的添加对晶粒生长具有一定的抑制作用,线收缩率和相对密度增大。室温介电常数随着La2O3掺杂量的增加而增大。与不添加La2O3的陶瓷样品相比,添加少量La2O3可以使体系的弛豫特征更为明显。当掺杂量为0.1 wt%时,该体系陶瓷具有较好的综合性能:d33=160 pC/N,kp=0.322。当掺杂量达到0.5 wt%以后,陶瓷的压电性能严重降低。
La2O3-doped （Bi1/2Na1/2）0.94Ba0.06TiO3 （BNBT6） lead-free piezoelectric ceramics have been prepared by using the conventional ceramic sintering technique. The effects of La2O3-doping on the dielectric and piezoelectric properties and microstructure of the ceramics are analyzed. The results indicate that the system possesses very good piezoelectric properties and single perovskite structure. The addition of La2O3 inhibits the growth of grains. With the content of La2O3 increasing, the line shrinkage and relative density increase. At room temperature, the dielectric constant increases with the amount of La2O3 doped increasing. Compared with the ceramics without La2O3, the relaxor behavior of the samples added with a small amount of La2O3 is more evident. When the La2O3 content is 0. 1 wt%, the doped samples show good performances with d33=160 pC/N and kp = 0. 322. When the content of La2O3 goes up to 0. 5 wt %, piezoelectric properties of the ceramics decrease phenomenally.
出处
《桂林电子科技大学学报》
2007年第1期51-55,共5页
Journal of Guilin University of Electronic Technology
