SiO_2/Si上直流磁控反应溅射制备AlN薄膜

Preparation of AlN Thin Film by DC Sputtering on SiO_2/Si and Analysis of Microstructure

利用正交设计分析了直流磁控溅射中溅射气压,衬底温度和N2浓度对SiO2/Si衬底上制备的AlN薄膜的(002)择优取向的影响水平。利用X-射线衍射(XRD)、场发射扫描电镜(FESEM)、原子力显微镜(AFM)对薄膜的晶向和表面形貌进行了分析,得到制备高度择优取向的AlN薄膜的最佳期望条件:衬底温度为250℃,溅射气压为2Pa,N2浓度为75%;并得出了氮气浓度对薄膜的(002)择优取向的影响较大。具有择优取向的AlN薄膜的折射率约为2.06。

To prepare AIN thin films with （002） preferred orientation, three sputtering factors such as the sputtering pressure, the substrate temperature, and the nitrogen concentration were investigated by orthngonal design of experiments. XRD, FESEM and AFM are employed to analyze the crystal orientation and the surface morphology. The preparing optimal condition for the thin film with highly preferred orientation summarized as： substrate temperature 250℃, sputtering pressure 2Pa and N2 concentration 75%. In addition, it was proved statistically that the nitrogen concentration is a significant sputtering factor for the （002） preferred orientation. The obtained films with an orientation of （002） have a refractive index of 2.06.