SOI-NMOS场效应晶体管的Kink特性分析

Analysis of Kink Characteristics in Silicon-on-Insulator NMOSFET

本文研究了在室温(RT)、液氮温度(LN)和液氮温度(LHe)下的SOI-NMOS场效应晶体管的电流—电压特性。研究的器件制作在二氧化硅上的经激光退火后的多晶硅薄膜体上。结果表明室温下带有薄膜引出端的晶体管的I_D—V_D特性曲线的Kink形状和液氦下观测到的N-MOS场效应晶体管的Kink形状很类似。实验还表明Kink大小是液氮下比室温下大、液氦下比液氮下的大。应用电容效应,低温下载流子“冻结”机制和不同偏压下载流子产生和复合的物理过程分析可以相应地解释不同温度下Kink效应。

The current-voltage characteristics in N-channel SOIMOSFET which was fabricated on laser annealed polycrystalline silicon have been investigated at room temperature (RT), liquid nitrogen temperature (LN) and liquid helium temperature (LHe). The results show that the Kink style of transistor with film contact terminal at RT is very similar to that observed in N-MOS devices at liquid helium temperature. The Kink size is larger at LN than at RT and larger at LHe than at LN. The Kink characteristics at the three temperatures can be explained by capacitance effect, carriers freezen mechanism at low temperature and generation and recombination of carriers under different bias voltages.