高频溅射SiO_2膜掩蔽GaAs和AlGaAs/GaAs中Zn扩散的研究

Study on Deposition of SiO_2 Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering

本文报导了在GaAs、AlGaAs表面上用高频溅射法制备SiO_2膜的淀积规律,特别对用SiO_2膜掩蔽GaAs、AlGaAs/GaAs中的Zn扩散进行了实验研究,结果证明用高频溅射制备SiO_2膜可以有效地掩蔽GaAs,AlGaAs/GaAs中的Zn扩散。

The deposition of SiO2 films on GaAs and AlGaAs by RF sputtering is described in this paper. The properties of films such as etching rate, refractive index, hole density, IR absorption spectra and Auger electron spectra have been measured and analysed.It is found that the sputtered SiO2 film is effective as a mask for Zn diffusion in GaAs and AlGaAs/GaAs.