高速BiCMOS技术

High Speed BiCMOS Technology

本文描述了一种可用于集成系统的高速BiCMOS技术。采用双埋层、双阱和外延结构,应用2μm设计规则,成功地将NPN器件和CMOS器件制作在同一芯片上。得到了满意的单管性能。在大负载条件下,BiCMOS反相器门的速度比普通CMOS反相器门快得多。

A high speed BiCMOS technology for integrated system is described. NPN and CMOS devices have been fabricated on the same chip with a buried twin well and epitaxy structure, using 2μm design rule. Satisfactory characteristics of single device have been achieved. Under heavily loading condition the speed of BiCMOS inverter is much faster than that of ordinary CMOS inverter.