砷化镓半导体外延层的电子声成像

Electron-Acoustic Microscopic Study of GaAs Epitaxial Layers

本实验利用扫描电子声显微镜对CaAs半导体外延片生长缺陷进行了电子声成像。通过分析不同条件下获得的电声图像,讨论了CaAs半导体外延片在电声成像中其电声信号的产生机制。

Scanning electron microscope has been used to study the growth defects in GaAs epitaxial layers.The mechanism of electron acoustic signal formation in GaAs has been discussed.The results indicate this technique is promising in semiconductor material analyses and assessment.