摘要
本文用ＤＣＤ法测量了注入能量为１６０ｋｅＶ，剂量为１×１０１４～３×１０１６ｃｍ－２，退火温度为５００～７００℃的Ａｓ＋注入Ｓｉ＜１１１＞的Ｒｏｃｋｉｎｇｃｕｒｖｅ．在建立台阶模型和分布函数的基础上，用ＸＲＤ动力学理论和最小二乘法拟合实验曲线，得到晶格应变随注入深度的变化，以及在不同退火温度下的恢复情况．实验发现，剂量为１×１０１６ｃｍ－２、６００℃退火，Ｒｏｃｋｉｎｇｃｕｒｖｅ出现双峰，说明有固相外延层形成．剂量大于１×１０１５ｃｍ－２，呈现了非晶特性．
Abstract X-ray double crystal diffraction method is used to measure the rocking curve of As+ implanted Si<111> implanted at energy of 160 keV, with different doses ranging from 1×1014 to 3×1016cm-2 and annealed at temperatures ranging from 500℃ to 700℃.On the basis of multilayer model and strain function,the diffraction profiles were simulated by the dynamical theory and the least square fit method to obtain strain distributions as a function of depth and process of recovering at different temperatures. For the rocking curve of the sample implanted with dose of 1×10116cm-2, annealed at 600℃, there are two peaks. It suggests that a solid-phase epitaxial layer is formed. The implanted layer presents amorphous character when the doses reach 1×1015cm-2.
