摘要
本文报道了由选择氧化和选择腐蚀法相结合研制的ＧａＡｓ／ＡｌＧａＡｓ垂直腔面发射半导体激光器，ＤＢＲ中的ＡｌＡＳ经选择氧化后形成的氧化层作为有源区的横向电流限制层，器件的最低阈值电流为３．８ｍＡ，输出功率大于１ｍＷ，发散角小于７．８°，高频测量脉冲上升沿达１００ｐｓ，并制成了２×３列阵器件。
Abstract We report the GaAs/AlGaAs vertical-cavity surface-emitting semiconductor lasers fabricated by selective oxidation and selective etching. The current aperture is formed by the buried oxide layers within monolithic distributed Bragg reflectors. The lowest threshold of 3. 8mA is achived with a 4μm square active region, continuous-wave at room temperature,the maxithum output power is greater than 1mW,its angle of divergence is less than 7. 8°and the pulse rise time is less than 100ps when measured at high frequency. A 2×3 2-D arrays is obtained.
基金
国家自然科学基金
