摘要
我们利用分子束外延（ＭＢＥ）方法研制出了高质量的ＩｎＧａＡｓ／ＧａＡｓ／ＡＩＧａＡｓ应变量子阱激光器外延材料，其最低的阈值电流密度可达到１４０Ａ／ｃｍ２，激发波长在９８０ｕｒｎ左右．通过脊型波导结构的制备，获得了高性能的适合于掺铒光纤放大器用的９８０ｕｒｎ量子阱激光器泵浦源，其典型的阈值电流和外微分量子效率分别为１５ｍＡ和０．８ｍＷ／ｍＡ，基横模的输出功率大于８０ｍＷ，器件在５０℃，８０ｍｗ的恒功率老化实验表明，器件具有较好的可靠性．通过与掺铒光纤的耦合，其组合件出纤功率可达６０ｍＷ以上．
Abstract High quality InGaAs/GaAs/AIGaAs strained quantum well laser epimaterials are achieved by molecular beam epitaxy. The lowest threshold current density is 140A/cm2 and the emitting wavelength is at 980urn. After the fabrication of ridgewaveguidestructure, high performance 980urn pump sources for Er--doped fiber amplifier are obtainedwith typical threshod current and external quantum efficiency of 15mA and 0. smW/mA,respectively. The output power with single lateral mode is more than 80mW, and the lifetests under constant output power at 50℃ demonstrated good reliability. Through the coupling with Er-doped fiber, the output power of more than 60mW was also achieved.
