Delta掺杂制备p-GaN薄膜及其电性能研究

Studies on electrical properties of delta-doping p-GaN films

采用Delta掺杂技术制备了p型氮化镓薄膜,并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析,发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高,说明Delta掺杂可有效抑制缺陷,并对缺陷抑制机理进行了讨论;最后,对掺杂前的预通氨过程作了深入的研究,结果发现,预通氨对掺杂不益.

Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delladoping, it is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the cartier concentration was decreased by the pre-purge.