摘要
采用Delta掺杂技术制备了p型氮化镓薄膜,并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析,发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高,说明Delta掺杂可有效抑制缺陷,并对缺陷抑制机理进行了讨论;最后,对掺杂前的预通氨过程作了深入的研究,结果发现,预通氨对掺杂不益.
Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delladoping, it is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the cartier concentration was decreased by the pre-purge.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第2期1036-1040,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60506012)
北京市教委重点项目(批准号:KZ200510005003)资助的课题~~