ZnO薄膜的激子能量和束缚能的计算

Calculation of exciton energies and binding energies in ZnO film

采用有效质量近似,将耦合在一起的6×6价带本征方程分开来考虑,取激子试探波函数为z方向和x-y平面分离的形式,用变分法计算了ZnO薄膜重空穴带激子基态能、第一激发态能、束缚能和激子的半径随薄膜厚度的变化关系,并讨论了电子波函数的量子隧穿效应对厚度d<2.0nm薄膜的能量修正.

In this paper, a coupled 6 × 6 Hamiltonian valence eigenfnnction is considered using effective mass approximation. Using a trial wave function separable in z direction and x-y plane, variational calculations are presented for energies of ground state and first excited state of heavy hole exciton and binding energies in ZnO film, and for radius of exciton under a variety of thickness d of ZnO film. And the correction of energies due to quantum tunnel effect of electronic wave function with the thickness d 〈 2.0 nm is discussed.